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Type: Power MOSFET
Vgs(th): 1.4 V
Vgs (Max): +8|-12V
Gate Charge (Qg): 3nC
Power consumption: 1.5W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 3.4A
Input Capacitance (Ciss): 330pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 140mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
