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Width: 5.5 mm
Height: 2.3 mm
Length: 6.5 mm
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 560
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 10 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 82
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 160 mV
