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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2.1 W
DC Current Gain hFE Max: 390 at 100 mA, 5 V
Gain Bandwidth Product fT: 220 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 2.5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120 at 100 mA, 5 V
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 200 mV
