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Width: 45.6 mm
Height: 21.1 mm
Length: 122 mm
Fall Time: 50 ns
Rise Time: 70 ns
Technology: SiC
Unit Weight: 302.171 g
Configuration: Dual
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 880 W
Vgs - Gate-Source Voltage: - 4 V, + 22 V
Typical Turn-On Delay Time: 50 ns
Typical Turn-Off Delay Time: 165 ns
Id - Continuous Drain Current: 180 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
