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Width: 62 mm
Length: 152 mm
Fall Time: 57 ns
Rise Time: 45 ns
Technology: SiC
Configuration: Dual
Mounting Style: Screw Mount
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 925 W
Vgs - Gate-Source Voltage: - 4 V, + 21 V
Typical Turn-On Delay Time: 63 ns
Typical Turn-Off Delay Time: 270 ns
Id - Continuous Drain Current: 291 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.8 V
