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ROHM Semiconductor BSM400D12P2G003 half bridge/CÂ°/SiC-DMOSFET and SiC-SBD | EMIN.COM.MM

Discrete & Power Modules
ROHM Semiconductor BSM400D12P2G003 half bridge/CÂ°/SiC-DMOSFET and SiC-SBD

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ROHM Semiconductor BSM400D12P2G003 half bridge/CÂ°/SiC-DMOSFET and SiC-SBD

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelBSM400D12P2G003

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Channel Type: Dual N Channel

Power Dissipation: 2.45

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 400

Mosfet Module Configuration: Half Bridge

Gate Source Threshold Voltage Max: 4

Datasheet

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