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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 680 at - 10 mA, - 2 V
Gain Bandwidth Product fT: 260 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 15 V
Continuous Collector Current: - 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 270 at - 10 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 250 mV
