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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 250 at 10 uA, 5 V
Gain Bandwidth Product fT: 700 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250
Collector- Emitter Voltage VCEO Max: 50 V
