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Technology: Si
Unit Weight: 10 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.5 W
Id - Continuous Drain Current: 3.5 A
Rds On - Drain-Source Resistance: 35 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
