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Width: 1.7 mm
Height: 0.77 mm
Length: 2 mm
Fall Time: 12 ns
Rise Time: 15 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 7 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 120 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
