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Fall Time: 291 ns
Rise Time: 25 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: Power MOSFET
Qg - Gate Charge: 168 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 125 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 47 ns
Typical Turn-Off Delay Time: 282 ns
Id - Continuous Drain Current: 180 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 140 S
Rds On - Drain-Source Resistance: 1.64 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
