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Technology: Si
Unit Weight: 83 mg
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2 W
Id - Continuous Drain Current: 4.5 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 3.5 S
Rds On - Drain-Source Resistance: 46 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
