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Fall Time: 13 ns, 40 ns
Rise Time: 18 ns, 18 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 7 nC, 40 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 17 ns
Typical Turn-Off Delay Time: 40 ns, 100 ns
Id - Continuous Drain Current: 4.5 A, 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S, 6.5 S
Rds On - Drain-Source Resistance: 65 mOhms, 70 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 3 V, 3 V
