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Fall Time: 5.7 ns, 20 ns
Rise Time: 8 ns, 12 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 7.2 nC, 10 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.2 ns, 8 ns
Typical Turn-Off Delay Time: 12 ns, 40 ns
Id - Continuous Drain Current: 7 A, 6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.7 S, 3.3 S
Rds On - Drain-Source Resistance: 28 mOhms, 50 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V
