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Width: 1.7 mm
Height: 0.77 mm
Length: 2 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 400 mW
DC Current Gain hFE Max: 680 at 100 mA, 2 V
Gain Bandwidth Product fT: 320 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 350 mV
