SemiQ GCMX020A120B3H1P Full Bridge SiC 1200V 20mohm MOSFET Full-Bridge Module
Manufacturer: SemiQ Model: GCMX020A120B3H1P - Contact
Fall Time: 18 ns
Rise Time: 10 ns
Technology: SiC
Mounting Style: Screw Mount
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 5 V, + 20 V
Typical Turn-On Delay Time: 26 ns
Typical Turn-Off Delay Time: 46 ns
Id - Continuous Drain Current: 93 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 18.1 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment