SemiQ GCMX080A120B2H1P Full Bridge SiC 1200V 80mohm MOSFET Full-Bridge Module
Manufacturer: SemiQ Model: GCMX080A120B2H1P - Contact
Fall Time: 4 ns
Rise Time: 3 ns
Technology: SiC
REACH - SVHC: Details
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Pd - Power Dissipation: 119 W
Vgs - Gate-Source Voltage: - 5 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 27 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 77 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment