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Speed: Standard Recovery >500ns > 200mA(Io)
Mounting Type: Chassis Mount
Reverse recovery time: 2us
Operating temperature range: -55 to 175C
Spannung – DC Reverse Vr Max: 1000V
Spannung – Vorwärts (Vf) Max: 1.2V@9A
Current - Average Rectified Io per Diode: 15A
Current - Reverse Leakage with Vr Applied: 1uA@1000V
