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Taiwan Semiconductor TQM048NH10CR RLG MOSFETs 100V, 100A, Single N-Channel Automotive Non-Logic Level, RDS (max) 4.8V

Name: Taiwan Semiconductor TQM048NH10CR RLG MOSFETs 100V, 100A, Single N-Channel Automotive Non-Logic Level, RDS (max) 4.8V
Brand: Taiwan Semiconductor

ManufacturerTaiwan Semiconductor(View more products from this manufacturer)

ModelTQM048NH10CR RLG

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Fall Time: 47 ns

Rise Time: 44 ns

Technology: Si

Unit Weight: 93.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 224 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 28 ns

Id - Continuous Drain Current: 146 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V