Taiwan Semiconductor TSM036N03PQ56 RLG MOSFETs 30V, 124A, Single N-Channel Power MOSFET

Fall Time: 10.6 ns

Rise Time: 10.4 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.8 ns

Typical Turn-Off Delay Time: 25.2 ns

Id - Continuous Drain Current: 124 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44 S

Rds On - Drain-Source Resistance: 3.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V