Taiwan Semiconductor TSM070NH04CR RLG MOSFETs 40V, 54A, Single N-Channel Power MOSFET

Fall Time: 4.8 ns

Rise Time: 50 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 46.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.5 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 54 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V