Taiwan Semiconductor TSM150NB04CR RLG MOSFETs 40V, 41A, Single N-Channel Power MOSFET

Fall Time: 12 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Single N-Channel Power MOSFET

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 41 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 37 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V