Taiwan Semiconductor TSM300NB06LDCR RLG MOSFETs 60V, 24A, Dual N-Channel Power MOSFET
Manufacturer: Taiwan Semiconductor Model: TSM300NB06LDCR RLG - Contact
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Qg - Gate Charge: 9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 40 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 24 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
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