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Fall Time: 14 ns, 49 ns
Rise Time: 65 ns, 79 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Transistor Type: Asymmetric Dual N-Channel Power MOSFET
Qg - Gate Charge: 9.3 nC, 49 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 30 W, 69 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.8 ns, 11 ns
Typical Turn-Off Delay Time: 8.2 ns, 34 ns
Id - Continuous Drain Current: 38 A, 107 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 27 S, 47 S
Rds On - Drain-Source Resistance: 8.8 mOhms, 2.7 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
