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Width: 3.3 mm
Height: 1 mm
Length: 3.3 mm
Fall Time: 5.2 ns
Rise Time: 16.1 ns
Technology: Si
Unit Weight: 44.400 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 6.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3 W
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Typical Turn-On Delay Time: 4.8 ns
Typical Turn-Off Delay Time: 13.8 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4.5 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
