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Width: 3.3 mm
Height: 1 mm
Length: 3.3 mm
Fall Time: 4.8 ns
Rise Time: 12.9 ns
Technology: Si
Unit Weight: 43.700 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel Power MOSFET
Qg - Gate Charge: 5.8 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 46 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 7.3 ns
Typical Turn-Off Delay Time: 8.5 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 5.3 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
