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Width: 3.3 mm
Height: 1.5 mm
Length: 3.3 mm
Fall Time: 4 ns, 5 ns
Rise Time: 29 ns, 27 ns
Technology: Si
Unit Weight: 68.100 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 5.7 nC, 10.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Typical Turn-On Delay Time: 8 ns, 8 ns
Typical Turn-Off Delay Time: 13 ns, 17 ns
Id - Continuous Drain Current: 25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 59 S, 107 S
Rds On - Drain-Source Resistance: 2.4 Ohms, 1.2 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV
