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Width: 3.5 mm
Height: 0.45 mm
Length: 5 mm
Fall Time: 7.6 ns, 8.2 ns
Rise Time: 56 ns, 49 ns
Technology: Si
Unit Weight: 71.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 9.2 nC, 40 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 8 W
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Typical Turn-On Delay Time: 8.7 ns, 17.5 ns
Typical Turn-Off Delay Time: 14 ns, 29 ns
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 67 S, 240 S
Rds On - Drain-Source Resistance: 6.4 mOhms, 1.95 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V, 1.7 V
