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Width: 1.47 mm
Height: 0.2 mm
Length: 3.37 mm
Fall Time: 712 ns, 712 ns
Rise Time: 260 ns, 260 ns
Technology: Si
Unit Weight: 3.100 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 40 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 164 ns, 164 ns
Typical Turn-Off Delay Time: 709 ns, 709 ns
Id - Continuous Drain Current: 14 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 48 S, 48 S
Rds On - Drain-Source Resistance: 4.6 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
