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Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Emitter- Base Voltage VEBO: 20 V
Collector- Base Voltage VCBO: 36 V
Continuous Collector Current: 2.2 A
Maximum DC Collector Current: 2.2 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: 0 C
Collector- Emitter Voltage VCEO Max: 36 V
Collector-Emitter Saturation Voltage: 1.8 V
