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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 15 V
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 15 V
Collector-Emitter Saturation Voltage: 200 mV
