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Width: 1.6 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 300 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
