Toshiba 2SC3325-Y,LF BJTs - Bipolar Transistors Transistor for Low Freq. Amplification
Manufacturer: Toshiba Model: 2SC3325-Y,LF - Contact
Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 240 at 100 mA, 1 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 70 at 100 mA, 1 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 100 mV
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment