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Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 10 W
DC Current Gain hFE Max: 450 at 0.5 A, 2 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 150 at 1 mA, 2 V
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 300 mV
