Toshiba HN1B01FU-GR,LXHF BJTs - Bipolar Transistors AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Manufacturer: Toshiba Model: HN1B01FU-GR,LXHF - Contact
Technology: Si
Configuration: Dual
Qualification: AEC-Q200
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 400 at 2 mA, 6 V
Gain Bandwidth Product fT: 120 MHz, 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 150 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 120 at 2 mA, 6 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 100 mV
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