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Width: 2 mm
Height: 0.75 mm
Length: 2 mm
Technology: Si
Unit Weight: 8.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3.6 nC, 6.74 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 25 ns, 21 ns
Typical Turn-Off Delay Time: 45 ns, 54 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 12 S, 9.5 S
Rds On - Drain-Source Resistance: 108 mOhms, 157 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV, 500 mV
