Toshiba TK8A50DA(STA4,Q,M) N-Channel Silicon MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm

Width: 4.5 mm

Height: 15 mm

Length: 10 mm

Fall Time: 11 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 760 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 4.4 V