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Toshiba TRS4V65H,LQ Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A DFN8x8 | EMIN.COM.MM

Diodes & Rectifiers
Toshiba TRS4V65H,LQ Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A DFN8x8

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Toshiba TRS4V65H,LQ Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A DFN8x8

ManufacturerToshiba(View more products from this manufacturer)

ModelTRS4V65H,LQ

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Technology: SiC

Mounting Style: SMD/SMT

If - Forward Current: 4 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.2 V

Pd - Power Dissipation: 50 W

Ifsm - Forward Surge Current: 230 A

Vrrm - Repetitive Reverse Voltage: 650 V

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