Transphorm TP65H015G5WS GaN FETs GAN FET 650V 95A TO2 47

Fall Time: 10 ns

Rise Time: 20 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 68 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 276 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 78 ns

Typical Turn-Off Delay Time: 132 ns

Id - Continuous Drain Current: 95 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 18 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V