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Fall Time: 7 ns, 20 ns
Rise Time: 12 ns, 15 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 4.5 nC, 6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.15 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 5 ns, 5 ns
Typical Turn-Off Delay Time: 13 ns, 20 ns
Id - Continuous Drain Current: 3 A, 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S, 5 S
Rds On - Drain-Source Resistance: 77 mOhms, 170 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
