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Width: 3.3 mm
Height: 1.04 mm
Length: 3.3 mm
Fall Time: 10 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 488.500 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 32 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 23 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 35 ns
Id - Continuous Drain Current: 25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 47 S
Rds On - Drain-Source Resistance: 16.4 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
