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Fall Time: 12 ns, 11 ns
Rise Time: 45 ns, 50 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 18 nC, 32 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.6 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 12 ns, 15 ns
Typical Turn-Off Delay Time: 22 ns, 30 ns
Id - Continuous Drain Current: 8 A, 6.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 55 S, 24 S
Rds On - Drain-Source Resistance: 15 mOhms, 28 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
