Vishay General Semiconductor SIJH440E-T1-GE3 MOSFETs N-Channel 40V PowerPAK 8x8L

Fall Time: 53 ns

Rise Time: 290 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 420 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 158 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Typical Turn-On Delay Time: 140 ns

Typical Turn-Off Delay Time: 78 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 140 S

Rds On - Drain-Source Resistance: 800 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V