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Fall Time: 5 ns, 5 ns
Rise Time: 5 ns, 11 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 6.9 nC, 11.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 16.2 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 7 ns, 8 ns
Typical Turn-Off Delay Time: 12 ns, 15 ns
Id - Continuous Drain Current: 25.3 A, 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 25 S, 42 S
Rds On - Drain-Source Resistance: 10 mOhms, 15 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
