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Fall Time: 7 ns
Rise Time: 9 ns
Technology: SiC
Configuration: 1-Phase Bridge
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vf - Forward Voltage: 1.52 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 139 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 82 ns
Id - Continuous Drain Current: 29 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 80 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
