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Fall Time: 18 ns
Technology: Si
Configuration: 1-Phase Bridge
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vr - Reverse Voltage: 600 V
Pd - Power Dissipation: 173 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-Off Delay Time: 149 ns
Id - Continuous Drain Current: 34 A
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
