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Fall Time: 5 ns, 10 ns
Rise Time: 6 ns, 55 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 15.2 nC, 14.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 33 W
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Typical Turn-On Delay Time: 15 ns, 25 ns
Typical Turn-Off Delay Time: 23 ns, 25 ns
Id - Continuous Drain Current: 48 A, 47 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 39 S, 55 S
Rds On - Drain-Source Resistance: 8 mOhms, 8.4 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
