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Vishay Siliconix SQD40081EL_GE3 MOSFETs -40V Vds; +/-20V Vgs TO-252; -50A Id

Name: Vishay Siliconix SQD40081EL_GE3 MOSFETs -40V Vds; +/-20V Vgs TO-252; -50A Id
Brand: Vishay Siliconix

ModelSQD40081EL_GE3

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Fall Time: 153 ns

Rise Time: 81 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 210 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 71 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 103 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 92 S

Rds On - Drain-Source Resistance: 8.5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V