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Width: 3.3 mm
Length: 3.3 mm
Fall Time: 10 ns
Rise Time: 10 ns
Technology: Si
Qg - Gate Charge: 11.2 nC
Pd - Power Dissipation: 3.6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5 ns
Typical Turn-Off Delay Time: 5 ns
Id - Continuous Drain Current: 14.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 12.4 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 4 V
