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Fall Time: 10 ns, 10 ns
Rise Time: 3 ns, 3 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 6.5 nC, 14.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27 W, 48 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 9 ns, 13 ns
Typical Turn-Off Delay Time: 15 ns, 23 ns
Id - Continuous Drain Current: 15 A, 40 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 35.5 mOhms, 15.5 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V, 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V
